PMDXB550UNE/S500Z
NXP Semiconductors
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Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 0.95V @ 250µA |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | DFN1010B-6 |
Serie | - |
Rds On (Max) @ Id, Vgs | 670mOhm @ 590mA, 4.5V |
Leistung - max | 285mW (Ta), 4.03W (Tc) |
Verpackung / Gehäuse | 6-XFDFN Exposed Pad |
Paket | Bulk |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 30.3pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 1.05nC @ 4.5V |
FET-Merkmal | Standard |
Drain-Source-Spannung (Vdss) | 30V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 590mA (Ta) |
Konfiguration | 2 N-Channel |
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PMDXB550UNE/S500ZNXP Semiconductors |
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